发明名称 Transfer method, method of manufacturing thin film devices, method of maufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, IC card, and electronic appliance
摘要 A transfer method comprising a step of forming a plurality of transferred bodies on a transfer origin substrate, and a step of applying energy to partial regions corresponding to the transferred bodies to be transferred, and transferring these transferred bodies corresponding to the partial regions onto a transfer destination substrate. A plurality of transferred bodies such as devices or circuits that are to be disposed on a transfer destination substrate with spaces therebetween can be manufactured integrated together on a transfer origin substrate, and hence compared with the case that the transferred bodies are formed on the transfer destination substrate directly, the amount of materials used in the manufacture of the transferred bodies can be reduced, the area efficiency can be greatly improved, and a transfer destination substrate on which a large number of devices or circuits are disposed in scattered locations can be manufactured efficiently and cheaply.
申请公布号 US2005106839(A1) 申请公布日期 2005.05.19
申请号 US20040012683 申请日期 2004.12.16
申请人 SEIKO EPSON CORPORATION 发明人 SHIMODA TATSUYA;UTSUNOMIYA SUMIO
分类号 H01L21/336;H01L21/77;H01L21/8242;H01L21/8244;H01L21/8246;H01L21/8247;H01L21/84;H01L27/115;H01L27/118;H01L27/13;H01L27/32;H01L51/56;H05K3/04;(IPC1-7):H01L31/036;H01L21/46 主分类号 H01L21/336
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