| 摘要 |
A semiconductor device, methods for manufacturing the semiconductor device, and an integrated circuit including the semiconductor device are disclosed. The semiconductor device includes an LDMOS transistor and a MOS transistor, both formed simultaneously on a same substrate. The gate electrodes and the gate oxide layers of the LDMOS and the MOS are formed independently from one another. The source and drain regions of the LDMOS and the MOS are respectively formed in a self-aligned manner. In this way, the LDMOS and the MOS can be formed, in an effective manner, while sustaining the respective desired characteristics.
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