发明名称 Semiconductor element having protruded bump electrodes
摘要 A method of forming a bump electrode on an IC electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving a bonding capillary upward, moving the bonding capillary sideways and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire. The Au wire is prevented from coming in contact with portions around the ball bond portion other than the ball bond portion by presetting a descent position of the bonding capillary to a position higher than a position in which the ball bond is formed.
申请公布号 US6894387(B2) 申请公布日期 2005.05.17
申请号 US20010768246 申请日期 2001.01.25
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HIGASHI KAZUSHI;TSUKAHARA NORIHITO;YONEZAWA TAKAHIRO;YAGI YOSHIHIKO;KITAYAMA YOSHIFUMI;OTANI HIROYUKI
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L21/60
代理机构 代理人
主权项
地址