发明名称 |
High-density finFET integration scheme |
摘要 |
The invention provides a method of manufacturing a fin-type field effect transistor (FinFET) that forms a unique FinFET that has a first fin with a central channel region and source and drain regions adjacent the channel region, a gate intersecting the first fin and covering the channel region, and a second fin having only a channel region.
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申请公布号 |
US6894326(B2) |
申请公布日期 |
2005.05.17 |
申请号 |
US20030604077 |
申请日期 |
2003.06.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NOWAK EDWARD J. |
分类号 |
H01L21/336;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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