One step deposition method for high-k dielectric and metal gate electrode

摘要

A method for forming a semiconductor structure removes the temporary gate formed on the dielectric layer to expose a recess in which oxygen-rich CVD oxide is deposited. A tantalum layer is then deposited by low-power physical vapor deposition on the CVD oxide. Annealing is then performed to create a Ta₂O₅ region and a Ta region from the deposited oxide and Ta. This creates a low carbon-content Ta₂O₅ and a metallic Ta gate in a single process step.