| 摘要 |
A nitride semiconductor laser chip 103 is fixed to a submount 102 serving as a mount member with solder 107. The submount 102 is made of a material having a thermal expansion coefficient higher than that of a nitride semiconductor substrate, and has a thickness equal to or greater than 1.2 times the thickness of the layered nitride semiconductor structure composed of an n-type GaN substrate 1 and a layered nitride semiconductor portion 2. Between the n-type GaN substrate 1 and the submount 102 is laid a metal film having a thickness of from 1 to 50 mum. |
