发明名称 |
Floating gate and fabricating method of the same |
摘要 |
A floating gate and a fabricating method of the same. A semiconductor substrate is provided. A gate dielectric layer and a conducting layer are sequentially formed on the semiconductor substrate. A patterned hard mask layer having an opening is formed on the conducting layer, wherein a portion of the conducting layer is exposed through the opening. A spacer is formed on the sidewall of the opening. The patterned hard mask layer is removed. A conducting spacer is formed on the sidewall of the spacer. The exposed conducting layer and the exposed gate dielectric layer are sequentially removed.
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申请公布号 |
US6893919(B2) |
申请公布日期 |
2005.05.17 |
申请号 |
US20040810740 |
申请日期 |
2004.03.26 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
CHUANG YING-CHENG;HUANG CHUNG-LIN |
分类号 |
H01L21/8247;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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