METHOD FOR FORMING SHALLOW TRENCH ISOLATION USE IN SELECTIVE EPITAXIAL GROWTH,申请号KR20030079736-传众专利搜索

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发明名称	METHOD FOR FORMING SHALLOW TRENCH ISOLATION USE IN SELECTIVE EPITAXIAL GROWTH
摘要
申请公布号	KR20050045599(A)	申请公布日期	2005.05.17
申请号	KR20030079736	申请日期	2003.11.12
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	JANG, SE MYEONG;KIM, MIN SANG;OH, YONG CHUL;YOUN, JAE MAN
分类号	H01L21/762;(IPC1-7):H01L21/762	主分类号	H01L21/762
代理机构		代理人
主权项
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