| 摘要 |
The invention relates to a very wide band amplifier circuit including a distributed amplification cell ( 100 ) connected to a biasing cell ( 200 ), the amplification cell ( 100 ) including several transistors (T 1 ) connected in parallel between a drain line and a grid line, each terminated at one of its ends by a load (Zin, Zout), the biasing cell ( 200 ) including at least one transistor (T 2 ) connected between a power source (V<SUB>DD</SUB>) and the drain line of the amplification cell ( 100 ), said biasing cell having an overall impedance equal to the impedance of the load (Zout) connected to the end of the drain line of the amplification cell ( 100 ), characterized in that the grid (G 2 ) of the transistor (T 2 ) of the biasing cell ( 200 ) is connected to the node ( 201 ) of a divider bridge (R 1 R 2 , R 1 T 3 ) so as to set its grid (G 2 ) potential (V<SUB>G2</SUB>), and in that the grid (G 2 ) and the source (S 2 ) of said transistor (T 2 ) are connected together by means of at least one capacitor (C 1 , C 2 ).
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