发明名称 |
Fabrication of silicon-on-insulator structure using plasma immersion ion implantation |
摘要 |
A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.
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申请公布号 |
US6893907(B2) |
申请公布日期 |
2005.05.17 |
申请号 |
US20040786410 |
申请日期 |
2004.02.24 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MAYDAN DAN;THAKUR RANDIR P. S.;COLLINS KENNETH S.;AL-BAYATI AMIR;HANAWA HIROJI;RAMASWAMY KARTIK;GALLO BIAGIO;NGUYEN ANDREW |
分类号 |
H01J37/32;(IPC1-7):H01L21/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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