发明名称 |
Method for improved plasma nitridation of ultra thin gate dielectrics |
摘要 |
A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.
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申请公布号 |
US6893979(B2) |
申请公布日期 |
2005.05.17 |
申请号 |
US20010809663 |
申请日期 |
2001.03.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KHARE MUKESH V.;D'EMIC CHRISTOPHER P.;HWANG THOMAS T.;JAMISON PAUL C.;QUINLIVAN JAMES J.;WARD BETH A. |
分类号 |
H01L21/265;H01L21/28;H01L21/314;H01L21/318;H01L29/51;H01L29/78;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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