Magnetron sputtering source having high deposition rate,申请号KR20020082780-传众专利搜索

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发明名称	Magnetron sputtering source having high deposition rate
摘要
申请公布号	KR100489299(B1)	申请公布日期	2005.05.17
申请号	KR20020082780	申请日期	2002.12.23
申请人		发明人
分类号	C23C14/35;(IPC1-7):C23C14/35	主分类号	C23C14/35
代理机构		代理人
主权项
地址

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