发明名称 Process for sidewall amplification of resist structures and for the production of structures having reduced structure size
摘要 The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.
申请公布号 US6893972(B2) 申请公布日期 2005.05.17
申请号 US20020233694 申请日期 2002.09.03
申请人 INFINEON TECHNOLOGIES AG 发明人 ROTTSTEGGE JOERG;KUEHN EBERHARD;HERBST WALTRAUD;ESCHBAUMER CHRISTIAN;HOHLE CHRISTOPH;FALK GERTRUD;SEBALD MICHAEL
分类号 G03F7/40;H01L21/027;H01L21/308;(IPC1-7):H01L21/302;C03C15/00;G03C1/73;H01L21/306 主分类号 G03F7/40
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