发明名称 |
Phase-change memory devices with a self-heater structure |
摘要 |
Phase change memory devices include a phase-change memory layer on a semiconductor substrate. The phase-change memory layer has a major axis that is substantially parallel to a major axis of the semiconductor substrate and has a first surface and a second surface opposite the first surface that are substantially parallel to the major axis of the phase-change memory layer. A first electrode is provided on the semiconductor substrate that is electrically connected to the first surface of the phase-change memory layer in a first contact region of the phase-change memory layer. A second electrode is provided on the semiconductor substrate that is electrically connected to the phase-change memory layer in a second contact region of the phase-change memory layer. The second contact region is space apart from the first contact region.
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申请公布号 |
US6894305(B2) |
申请公布日期 |
2005.05.17 |
申请号 |
US20040780073 |
申请日期 |
2004.02.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YI JI-HYE;HIDEKI HORII;HA YONG-HO |
分类号 |
H01L27/10;H01L45/00;(IPC1-7):H01L47/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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