| 发明名称 |
Method for forming capacitor of semiconductor device |
| 摘要 |
Disclosed is a method for forming a capacitor of a semiconductor device. The forming method comprises the step of forming an interlayer insulating film on a semiconductor substrate formed with a bit line. A contact plug to be in contact with the substrate is formed within the interlayer insulating film. A storage electrode is formed on the interlayer insulating film in such a manner that the storage electrode comes in contact with the contact plug. A dielectric film composed of a single composite film of Ta<SUB>2</SUB>O<SUB>5</SUB>(X)Y<SUB>2</SUB>O<SUB>3</SUB>(1-X) is also formed on the storage electrode according to ALD (Atomic Layer Deposition) technology. A diffusion barrier film is deposited on the dielectric film, and a plate electrode is formed on the diffusion barrier film. The present invention can provide a capacitor having sufficient capacitance necessary for a stable device operation by applying the Ta<SUB>2</SUB>O<SUB>5</SUB>(X)Y<SUB>2</SUB>O<SUB>3</SUB>(1-X) single composite film to the dielectric film.
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| 申请公布号 |
US6893913(B2) |
申请公布日期 |
2005.05.17 |
| 申请号 |
US20030603306 |
申请日期 |
2003.06.25 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
AHN BYOUNG KWON;PARK SUNG HOON |
| 分类号 |
H01L27/04;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/04 |
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