摘要 |
A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a p<SUP>+</SUP> gate and a gate electrode is formed on the bottom of the first region, the structure is built such that the p<SUP>+</SUP> gate and an n<SUP>+</SUP> source are contiguous. An insulating film is formed on the surface of an n<SUP>-</SUP> channel, and an auxiliary gate electrode is formed on the insulating film. In addition, the auxiliary gate electrode and the source electrode are shorted.
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