发明名称 FILM BULK ACOUSTIC RESONATOR AND METHOD OF PRODUCING THE SAME
摘要 The device includes a gold or titanium seed layer (39) formed on the upper surface of a substrate structure (30). One or more acoustic resonator parts (40) having a respective lower electrode film (42) are arranged on the seed layer and are mode of molybdenum. A piezoelectric layer (44) made of aluminum nitride (AlN) is arranged on the lower electrode film. An upper electrode film is formed on the piezoelectric layer. An independent claim is included for a method of manufacturing a film bulk acoustic resonator device.
申请公布号 KR100489828(B1) 申请公布日期 2005.05.16
申请号 KR20030021705 申请日期 2003.04.07
申请人 发明人
分类号 H01L41/09;H03H9/56;H01L41/08;H01L41/18;H01L41/22;H01L41/29;H01L41/319;H03H3/02;H03H9/17 主分类号 H01L41/09
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