| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for controlling cooling rate of a semiconductor device melted by laser irradiation and enlarging scale of a grown crystal, and to provide its manufacturing method. SOLUTION: In the semiconductor device 1, a first base film 3, a second base film 4 and a semiconductor film 5 are stacked in this order on a substrate 2. It is characterized that thermal conductivity of the first base film 3 is higher than those of the substrate 2 and the second base film 4. COPYRIGHT: (C)2005,JPO&NCIPI
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