发明名称 Method of manufacturing a semiconductor device
摘要 A low thermal conductivity layer is formed on a back surface of a semiconductor wafer or chip, and a laser impression is formed on the low thermal conductivity layer. The laser impression can be formed without damaging the device surface of the semiconductor wafer or chip due to exothermic heat of the laser impression.
申请公布号 US2005101106(A1) 申请公布日期 2005.05.12
申请号 US20040992701 申请日期 2004.11.22
申请人 OTAKI MIKIO 发明人 OTAKI MIKIO
分类号 H01L23/12;H01L21/56;H01L21/60;H01L23/00;H01L23/31;H01L23/367;H01L23/544;(IPC1-7):H01L21/301 主分类号 H01L23/12
代理机构 代理人
主权项
地址