SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the loss of retention data of a plurality of memory cells caused by a charge accumulated in a body region of a MOS transistor.

SOLUTION: The semiconductor storage device comprises: the plurality of memory cells disposed in a plurality of columns and a plurality of rows and each comprising a MOS transistor having one and the other source/drain, a body interposed therebetween and a gate; a plurality of bit lines disposed in a plurality of rows and each connected to the other source/drain of the MOS transistor of the memory cell disposed in the corresponding row; and a plurality of word lines disposed in a plurality of columns and each connected to the gate of the MOS transistor of the memory cell disposed in the corresponding column. The MOS transistor is formed in a semiconductor layer of an SOI substrate. The semiconductor storage device further comprises a refresh controlling circuit executing refresh operation for preventing loss of the retention data of the plurality of memory cells caused by the charge accumulated in the body region of the MOS transistor.

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