发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device which improves reliability by preventing the occurrence of cracks, and provide its manufacturing method. <P>SOLUTION: In the semiconductor device 1, a semiconductor element 4 is mounted on a conductive pattern 5 formed in the surface of a base material 2, and the semiconductor element 4 is sealed by a resin package 8. A silicon-base coating layer 9 is formed in an interface between the resin package 8 and the semiconductor element 4. Since silicon is flexible and has poor adhesiveness to epoxy resin, when the semiconductor device 1 is heated, vapor which is generated from epoxy resin and is going to escape to a semiconductor device side is to creep between the resin package and the coating layer. At this time, the silicon becomes deformed due to pressure of vapor and capacity of a clearance enlarges, thus weakening pressure received by the resin package. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005123490(A) 申请公布日期 2005.05.12
申请号 JP20030358676 申请日期 2003.10.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KOMABASHIRI NARIAKI
分类号 H01L23/29;H01L23/31 主分类号 H01L23/29
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