发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for preventing air bubbles from being brought therearound and resin from being cracked by exposing the head top of a protruded electrode without performing an exposing processing for the tip end of the protruded electrode after resin sealing. SOLUTION: A protruded electrode (2) is formed on the first principal surface of a semiconductor wafer (1) on which a plurality of semiconductor elements are formed, and a metal plate (5) is formed on the second principal surface of the semiconductor wafer over the whole of the same. The semiconductor wafer (1) is diced into the individual semiconductor elements leaving the metal plate (5) behind and taking a side of the first principal surface of the semiconductor wafer (1) as a cut area, and the semiconductor wafer (1) is mounted in a pair of upper and lower metal molds (6, 6). Molding resin (10) is injected from any one of the upper or lower metal molds while holding the semiconductor wafer in the metal molds with pressure. Further, the semiconductor wafer is resin molded, and molded resin is hardened to dice the semiconductor wafer to the individual semiconductor elements. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005123456(A) 申请公布日期 2005.05.12
申请号 JP20030357942 申请日期 2003.10.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TOKIDA SHIGEKI;NIWA IKUO
分类号 H01L23/29;H01L21/301;H01L21/56;H01L23/12;H01L23/31;(IPC1-7):H01L23/29 主分类号 H01L23/29
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