Via contact forming method

摘要

A via contact forming method. The method includes the steps of providing a substrate; forming a first dielectric layer on the substrate; forming a bit line in the first dielectric layer; forming a liner layer on the first dielectric layer containing the bit line; forming a second dielectric layer on the liner layer; in the second dielectric layer, forming a contact hole leading to the bit line; and filling the contact hole with metal to form a via contact. The via contact forming method in accordance with the present invention has high tolerance to misalignment between the via contact and the bit line, while maintaining low resistance and good electric performance.