发明名称 |
Semiconductor device having trench capacitor and fabrication method for the same |
摘要 |
A semiconductor device includes a semiconductor substrate with a trench; a capacitor; a collar oxide film arranged on a portion of a side of the trench above the capacitor; a storage node arranged on a side of the collar oxide film in an upper portion of the trench and electrically connected to a storage electrode of the capacitor; a select transistor provided on a surface of the semiconductor substrate and having a source region in contact with the trench; a spacer covering a side of the source region; and a surface strap contact arranged upon the spacers, the source region and the storage node.
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申请公布号 |
US2005101094(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20040922228 |
申请日期 |
2004.08.20 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KITO MASARU;KIDO MASARU;AOCHI HIDEAKI;TANAKA TOSHIHARU;KATSUMATA RYOTA;INOKUMA HIDEKI;TAKEGAWA YOICHI |
分类号 |
H01L27/108;H01L21/8242;H01L29/94;(IPC1-7):H01L21/824;H01L29/76;H01L31/119;H01L21/336 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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