| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an aqueous polishing composite which can reduce the erosion of a barrier layer formed on an insulating layer, in the chemical mechanical planarization of a semiconductor wafer. <P>SOLUTION: An aqueous chemical mechanical planarization composite contains an oxidizer for promoting the removal of a barrier, abrasive grain, an inhibitor for reducing the removal of a metallic wire, and a carboxylic acid polymer having at least one repeating unit of a polymer containing at least two carboxylic acid functional groups. A speed for removing tantalum nitride is at least 80% of a speed for removing copper with a pH of ≤4 and a pad pressure of 13.8 kPa. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
