| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS device, including a first conduction type substrate and a second conduction type semiconductor layer, that is formed at least on a part of the substrate, which has a second layer. SOLUTION: The first and second source/drain regions of the second conduction type are formed in a second layer near the top surface of the second layer, and the second layer is separated in a cross direction from the first source/drain region. A gate is formed on a second layer near the top surface of the second layer, and at least partially in between the first and the second source/drain region. The MOS device, further has at least one electrically conductive trench that is formed in the second layer between the gate and the second source/drain region, and the trench is formed near the top surface of the semiconductor layer, thus extending approximately vertically with respect to the substrate by way of the second layer. The MOS device exhibits a reduced HCI effect and/or improved high-frequency performance. COPYRIGHT: (C)2005,JPO&NCIPI
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