发明名称 |
SEMICONDUCTOR THIN FILM, ITS MANUFACTURING METHOD, AND THIN FILM TRANSISTOR USING THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor thin film by which a region crystallized generally toward one direction and having no grain boundary in the direction of a crystal growth can be homogeneously formed at an arbitrary location in the semiconductor thin film. SOLUTION: The method for manufacturing a semiconductor thin film comprises steps of forming at least a semiconductor thin film on a substrate, forming an anti-reflection film pattern and a reflection film pattern on the semiconductor thin film to be adjacent to each other, and forming direction-aligned semiconductor grains in the lower part of the anti-reflection film pattern by applying a first laser beam from the above side of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005123475(A) |
申请公布日期 |
2005.05.12 |
申请号 |
JP20030358261 |
申请日期 |
2003.10.17 |
申请人 |
SHARP CORP |
发明人 |
TSUNASAWA HIROSHI;NAKAYAMA JUNICHIRO;INUI TETSUYA |
分类号 |
H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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地址 |
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