发明名称 SEMICONDUCTOR THIN FILM, ITS MANUFACTURING METHOD, AND THIN FILM TRANSISTOR USING THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor thin film by which a region crystallized generally toward one direction and having no grain boundary in the direction of a crystal growth can be homogeneously formed at an arbitrary location in the semiconductor thin film. SOLUTION: The method for manufacturing a semiconductor thin film comprises steps of forming at least a semiconductor thin film on a substrate, forming an anti-reflection film pattern and a reflection film pattern on the semiconductor thin film to be adjacent to each other, and forming direction-aligned semiconductor grains in the lower part of the anti-reflection film pattern by applying a first laser beam from the above side of the substrate. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005123475(A) 申请公布日期 2005.05.12
申请号 JP20030358261 申请日期 2003.10.17
申请人 SHARP CORP 发明人 TSUNASAWA HIROSHI;NAKAYAMA JUNICHIRO;INUI TETSUYA
分类号 H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 H01L21/20
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