MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a method for manufacturing a semiconductor device capable of improving the adhesive properties of a diffusion preventive film and a metallic film. SOLUTION: The manufacturing method for the semiconductor device has a process in which the diffusion preventive film composed of a metallic nitride is formed on a semiconductor substrate by a vapor film-formation method, the process in which a metallic adhesive film composed of a metal or a metallic compound is formed on the diffusion preventive film by the vapor film-formation method, and the process in which a metallic film composed of the metal or the metallic compound is formed on the metallic adhesive film. A film having adhesive properties with the metallic film higher than those of the diffusion preventive film and the metallic film is used as the metallic adhesive film. COPYRIGHT: (C)2005,JPO&NCIPI