| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a film which can form a film having a low relative dielectric constant and exhibiting excellent chemical resistance. SOLUTION: The composition for forming the film comprises a hydrolyzate condensate (I) obtained by hydrolytically condensing (A) at least one silane compound, selected from among a compound (A-1) represented by general formula (1): R<SB>a</SB>Si(OR<SP>1</SP>)<SB>4-a</SB>, a compound (A-2) represented by general formula (2): Si(OR<SP>2</SP>)<SB>4</SB>and a compound (A-3) represented by general formula (3): R<SP>3</SP><SB>b</SB>(R<SP>4</SP>O)<SB>3-b</SB>Si-(R<SP>7</SP>)<SB>d</SB>-Si(OR<SP>5</SP>)<SB>3-c</SB>R<SP>6</SP><SB>c</SB>, and (B) a cyclic silane compound represented by general formula (4), a compound (II) which is compatible with or dispersible in the hydrolyzate condensate (I) and has a boiling point or a decomposition temperature of 200-400°C, and an organic solvent (III). COPYRIGHT: (C)2005,JPO&NCIPI
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