| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To evaluate defect detection sensitivity in inspection of a defect of a mask pattern. <P>SOLUTION: The defect detection sensitivity is inspected by using a mask for defect inspection having a photomask pattern which includes a basic pattern and a pattern defect comprising a resist pattern at a specified position of the basic pattern. The mask for defect inspection is produced by forming the basic pattern on a photomask substrate, applying a resist on the basic pattern, and exposing and developing the resist to form a specified pattern defect. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
