| 摘要 |
A method of manufacturing a semiconductor device includes: a step of forming a bottom oxide film on a silicon substrate in a memory transistor formation region and a peripheral circuit transistor formation region; a step of forming a nitride film on the bottom oxide film; a step of forming a top oxide film on the nitride film; a step of removing the top oxide film, the nitride film and the bottom oxide film from the peripheral circuit transistor formation region to expose a surface of the silicon substrate in the peripheral circuit transistor formation region; and a step of forming a gate oxide film on the silicon substrate in the peripheral circuit transistor formation region.
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