发明名称 |
ULTRAVIOLET (UV) AND PLASMA ASSISTED METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) SYSTEM |
摘要 |
The present invention is a high-throughput, ultraviolet (UV) assisted metalorganic chemical vapor deposition (MOCVD) system for the manufacture of HTS-coated tapes. The UV-assisted MOCVD system of the present invention includes a UV source that irradiates the deposition zone and improves the thin film growth rate. The MOCVD system further enhances the excitation of the precursor vapors and utilizes an atmosphere of monatomic oxygen (O) rather than the more conventional diatomic oxygen (O2) in order to optimize reaction kinetics and thereby increase the thin film growth rate. In an alternate embodiment, a microwave plasma injector is substituted for the UV source. |
申请公布号 |
WO2004108978(A3) |
申请公布日期 |
2005.05.12 |
申请号 |
WO2004US16638 |
申请日期 |
2004.05.25 |
申请人 |
SUPERPOWER, INC. |
发明人 |
SELVAMANICKAM, VENKAT;LEE, HEE-GYOUN |
分类号 |
C23C16/448;C23C16/48;C23C16/511;C23C16/54;H01L39/24 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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