LIGHT RECEIVING ELEMENT, CIRCUIT-BUILT-IN TYPE LIGHT RECEIVING DEVICE AND OPTICAL DISK UNIT

摘要

A first P-type diffusion layer (101) and a P-type semiconductor layer (102) are provided on a silicon substrate (100), and two N-type diffusion layers (103, 103) are provided on the front surface of this P-type semiconductor layer (102) to form two light receiving units. Three-layer translucent films, a first silicon oxide film (105), a silicon nitride film (106), and a second silicon oxide film (107) are disposed on the N-type diffusion layers (103, 103) and on the P- type semiconductor layer (102) between the two diffusion layers (103, 103). Holes produced during a production process and distributed and captured in two interfaces between the three-layer translucent films can reduce a field intensity in the vicinity of the surface of the P-type semiconductor layer (102) to below a conventional level and the inversion of a conductive type to reduce a leak current between the light receiving units accordingly.