发明名称 |
PASTED WAFER AND METHOD FOR PRODUCING PASTED WAFER |
摘要 |
A pasted wafer having a silicon single crystal layer stacked on a silicon single crystal wafer, characterized in that the silicon single crystal layer has a crystal face orientation {110} and the silicon single crystal wafer has a crystal face orientation {100}. A method for producing a pasted wafer characterized in that a first silicon single crystal wafer having a crystal face orientation {110} and a second silicon single crystal wafer having a crystal face orientation {100} are pasted together directly or through an insulating film and then the first silicon single crystal wafer is made thin. According to the method, a wafer that can provide an MIS device having excellent characteristics utilizing a silicon single crystal wafer of {110} can be provided.
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申请公布号 |
KR20050044643(A) |
申请公布日期 |
2005.05.12 |
申请号 |
KR20047008428 |
申请日期 |
2004.06.02 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
DEMIZU, KIYOSHI;MITANI, KIYOSHI;OHMI, TADAHIRO;SUGAWA, SHIGETOSHI;YOKOKAWA, ISAO |
分类号 |
H01L21/762;(IPC1-7):H01L27/12;H01L21/20 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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