| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the generation of the bridge of resist pattern and improve the yield and reliability of a semiconductor manufacturing device, in a lithography process employing an organic reflection preventing film. <P>SOLUTION: The manufacturing method of semiconductor device comprises a process (a) for forming the organic reflection preventing film 10 on the surface of a semiconductor substrate 1, a process (b) for applying organic solvent 11 on the surface of semiconductor substrate 1 to effect washing by wet etching the surface of the organic reflection preventing film 10, and a process (c) for forming a resist film 12 after the process (b). According to this method, the bridge of the resist pattern is not generated whereby the yield and reliability of the semiconductor manufacturing device can be improved. In this case, bridge fault due to foreign matters can be prevented since the foreign matters which are difficult to be solved by alkali will not be produced in an interface between the organic reflection preventing film 10 and the photoresist film by the application of the washing by wet etching on the organic reflection preventing film 10 through the organic solvent 11 even though a neglect time for forming the organic reflection preventing film 10 and the photoresist film is long. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
