发明名称 |
Minimizing the loss of barrier materials during photoresist stripping |
摘要 |
A method of removing a photoresist layer from an integrated circuit (IC) structure having an etched dielectric material with an exposed barrier layer that covers a copper interconnect. The barrier layer is composed of a material such as silicon nitride or silicon carbide. The method includes feeding a gas mixture that compromises carbon monoxide (CO) into a reactor. A plasma is then generated within the reactor. The photoresist layer is then selectively removed with little or no etching of the exposed barrier layer.
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申请公布号 |
US2005101135(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20030712326 |
申请日期 |
2003.11.12 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
ANNAPRAGADA RAO;ZHU HELEN |
分类号 |
G03F7/42;H01L21/302;H01L21/311;H01L21/461;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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