发明名称 PORE STRUCTURE, ITS PRODUCTION METHOD, MEMORY DEVICE, ITS PRODUCTION METHOD, ADSORPTION AMOUNT ANALYZER, AND MAGNETIC RECORDING MEDIUM
摘要 <P>PROBLEM TO BE SOLVED: To provide a pore structure showing excellent adhesion with a substrate electro-conductive layer and having a surface with improved flatness, to provide its production method, to provide a memory device using the pore structure, to provide its production method, to provide an adsorption amount analyzer, and to provide a magnetic recording medium. <P>SOLUTION: A base electro-conductive layer 2 and an Al-Hf alloy layer 3 (or a stacked body of the Al-Hf alloy layer 3 and an Al layer) are formed on a substrate 1 in a stacked state. A simple substance composed of Pt, Ir, Pd, Rh, Au, Ag, Ru, Cu or Ni or an alloy thereof having satisfactory adhesion to the Al-Hf alloy layer 3 is used for the base electro-conductive layer 2. Next, the Al-Hf alloy layer 3 (or the stacked body) is anodized in an acid aqueous solution to form a nanohole structure having nanoholes 8, and, if required, the nanoholes 8 are subjected to width expansion working by etching. Then, a functional material 10 such as a ferroelectric material, a ferromagnetic material, a variable resistance material, a phase transition material and a phosphor material is filled into the nanoholes, by which the nanohole structure having various functions is produced. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005120421(A) 申请公布日期 2005.05.12
申请号 JP20030356431 申请日期 2003.10.16
申请人 SONY CORP 发明人 HIRONAKA KATSUYUKI;ISOBE CHIHARU;SUZUKI MASAYUKI;ISHIDA YUICHI;NAITO HIROKI
分类号 G01N27/04;B82B1/00;B82B3/00;C25D11/04;C25D11/16;C25D11/18;C25D11/20;C25D11/24;G01N5/02;G11B5/65;G11B5/855;G11B7/24;H01L21/8246;H01L27/10;H01L27/105 主分类号 G01N27/04
代理机构 代理人
主权项
地址