| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device to which the write-in of data is easily attained. <P>SOLUTION: This semiconductor storage device includes a SRAM cell having a latch circuit wherein two inverters are connected in a chain state. Each inverter is connected to a power source through a transistor (S4 or S5), and these transistors are cut off when the data are written into the SRAM cell. As the result, the holding ability of the latch circuit is weakened when the data are written into the SRAM cell, then the data can be written into the SRAM cell without causing the collision of the data. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
