发明名称 PHOTORESIST-OVERCOATING COMPOSITION, METHOD FOR FORMING PHOTORESIST PATTERN, AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a stable fine pattern with a perpendicular profile, even when the absorbance of a photoresist resin with respect to a light source is relatively high. <P>SOLUTION: The new photoresist overcoating composition is prepared by introducing a substance which stably weakens acid into an overcoating composition. Because the substance is diffused uniformly into a photoresist film laid under the overcoat and neutralizes an acid produced in a large amount in the upper part of the photoresist, the vertical distribution of the acid is made uniform and a fine pattern having &le;100 nm width and a perpendicular profile can be obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005122104(A) 申请公布日期 2005.05.12
申请号 JP20040193372 申请日期 2004.06.30
申请人 HYNIX SEMICONDUCTOR INC 发明人 JUNG JAE CHANG
分类号 G03C1/76;G03F7/004;G03F7/039;G03F7/11;G03F7/20;H01L21/027 主分类号 G03C1/76
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