| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device in which a non-reflection film having a desired reflection factor and a high reliability is fabricated by a simple manufacturing process, and also to provide its manufacturing method. <P>SOLUTION: On the surface of an emission end face, a silicon nitride film 5 is formed by plasma CVD and then a silicon dioxide film 6, a zirconium oxide film 7, and another silicon dioxide film 8 are formed in order. Where refractive indices of the films 5-8 are n1, n2, n3, and n4 respectively and thicknesses are d1, d2, d3, and d4 respectively, the sum of nd products, that is, n1×d1+n2×d2+n3×d3+n4×d4, is set to 1/4 of a wavelength of light source, with an error within±10%. Because of this structure, the refractive index of the non-reflection film is reduced to 1E-4 or less over a wide range of band. Moreover, the non-reflection film thus-fabricated is physically strong, and hence is prevented from such problems as film separation, falling-off, and current leakage on an interface with the emission face of the semiconductor. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
