| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor single crystal manufacturing apparatus which can suppress the local deterioration of a wire caused by the in-furnace high temperature atmosphere of a chamber. SOLUTION: In the apparatus, a crucible 24 in which a silicon melt 28 is filled is provided in a furnace of the chamber 22, a pull chamber 23 is arranged at an upper part of the chamber 22, a seed holder 32 being elevated/lowered between inside the pull chamber 23 and inside the furnace is hung by a wire 50 through a connection member 31, and a collar 52 is provided in the wire 50 so that the temperature at an exposed part in the vicinity of the tip end part of the wire 50 becomes equal to or lower than a prescribed temperature under the high temperature atmosphere when the seed holder 32 is lowered so as to bring a seed into contact with the melt. COPYRIGHT: (C)2005,JPO&NCIPI |
