| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer manufacturing method which is capable of eliminating void-type defects located in the surface of a silicon wafer efficiently and effectively and manufacturing a wafer provided with an oxide film improved in withstand voltage properties with high productivity when the silicon wafer is manufactured. SOLUTION: The silicon wafer manufacturing method comprises the processes of growing a silicon single crystal rod through a Czochralski method, slicing the grown silicon single crystal rod into silicon wafers, and subjecting the sliced silicon wafers to a rapid heating/rapid cooling thermal treatment. The silicon wafer is subjected to an inner wall oxide film removing process in which an inner wall oxide film of the void-type defect located on the surface part of the wafer is removed through an HF treatment before the rapid heating/rapid cooling thermal treatment is carried out. Thereafter, the silicon wafer is subjected to a rapid heating/rapid cooling thermal treatment in a reducing atmosphere at a temperature above 1,150°C and below the melting point of silicon, whereby the void-type defects located in the surface part of the wafer can be eliminated. COPYRIGHT: (C)2005,JPO&NCIPI
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