发明名称 |
Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
摘要 |
A method of fabricating an epitaxial silicon-germanium layer for an integrated semiconductor device comprises the step of depositing an arsenic in-situ doped silicon-germanium layer, wherein arsenic and germanium are introduced subsequently into different regions of said silicon-germanium layer during deposition of said silicon-germanium layer. By separating arsenic from germanium any interaction between arsenic and germanium is avoided during deposition thereby allowing fabricating silicon-germanium layers with reproducible doping profiles.
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申请公布号 |
US2005098093(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20040934188 |
申请日期 |
2004.09.02 |
申请人 |
BABCOCK JEFFREY A.;BALSTER SCOTT;HAEUSLER ALFRED;PINTO ANGELO;SCHIEKOFER MANFRED;STEINMANN PHILIPP;EL-KAREH BADIH |
发明人 |
BABCOCK JEFFREY A.;BALSTER SCOTT;HAEUSLER ALFRED;PINTO ANGELO;SCHIEKOFER MANFRED;STEINMANN PHILIPP;EL-KAREH BADIH |
分类号 |
C23C16/42;C23C16/56;C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L21/205;H01L21/331;H01L21/8222;H01L29/737;(IPC1-7):C30B23/00;H01L21/822 |
主分类号 |
C23C16/42 |
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