发明名称 |
PLASMA TREATMENT METHOD, PLASMA FILM FORMING METHOD, PLASMA ETCHING METHOD AND PLASMA TREATMENT DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment method in which a substrate, a thin film and the like having a large area can be subjected to uniform plasma treatment. <P>SOLUTION: The plasma treatment method comprises a step of performing plasma treatment on a surface to be plasma-treated in plasma in which particles constituting the plasma caused by a plasma treatment material gas containing molecules to be negative ions in the plasma and gas-like molecules relieving an electric function of the negative ion are mixedly present. Preferably, the gas-like molecules have negative electronic affinities. Further, preferably, a reaction sectional area pertaining to the electronic adhesion of the gas-like molecules is smaller than that pertaining to the electronic adhesion of the plasma treatment material gas. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005123389(A) |
申请公布日期 |
2005.05.12 |
申请号 |
JP20030356454 |
申请日期 |
2003.10.16 |
申请人 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD |
发明人 |
AZUMA KAZUFUMI;NAKADA YUKIHIKO;GOTO SHINJI;OKAMOTO TETSUYA;SASAKI ATSUSHI |
分类号 |
H05H1/46;C23C16/511;H01L21/205;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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