发明名称 PLASMA TREATMENT METHOD, PLASMA FILM FORMING METHOD, PLASMA ETCHING METHOD AND PLASMA TREATMENT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment method in which a substrate, a thin film and the like having a large area can be subjected to uniform plasma treatment. <P>SOLUTION: The plasma treatment method comprises a step of performing plasma treatment on a surface to be plasma-treated in plasma in which particles constituting the plasma caused by a plasma treatment material gas containing molecules to be negative ions in the plasma and gas-like molecules relieving an electric function of the negative ion are mixedly present. Preferably, the gas-like molecules have negative electronic affinities. Further, preferably, a reaction sectional area pertaining to the electronic adhesion of the gas-like molecules is smaller than that pertaining to the electronic adhesion of the plasma treatment material gas. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005123389(A) 申请公布日期 2005.05.12
申请号 JP20030356454 申请日期 2003.10.16
申请人 ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD 发明人 AZUMA KAZUFUMI;NAKADA YUKIHIKO;GOTO SHINJI;OKAMOTO TETSUYA;SASAKI ATSUSHI
分类号 H05H1/46;C23C16/511;H01L21/205;H01L21/3065 主分类号 H05H1/46
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