| 摘要 |
PROBLEM TO BE SOLVED: To take out an electrode from a GaN-based base layer with high yield by temporarily interrupting growth when a base layer is made and forming the electrode previously on the base layer, to reduce the number of forming processes by utilizing it as a part of a mask in the case of dry etching, to clean and flatten a base layer surface after electrode removal by using active nitride from an RF plasma before starting the growth again by utilizing a function which a crystal growth device originally has, to reduce the number of processes, and to prevent the deterioration of a crystal due to the interruption of the growth. SOLUTION: In the manufacturing method of the semiconductor device, transistor elements comprise nitride-based semiconductors, and are respectively provided with a collector layer, a base layer, and an emitter layer of the same conduction type. The method comprises a process of growing the collector layer and the base layer, a process of forming an ohmmic contact electrode in the prescribed area of the base layer and using this as a part of a mask when dry etching, and a process of growing a resonance tunnel diode element and the emitter layer on the base layer outside of an area in which the electrode is formed. COPYRIGHT: (C)2005,JPO&NCIPI |
