| 摘要 |
PROBLEM TO BE SOLVED: To solve problems wherein a short circuit between a base and an emitter is generated owing to cracks at an insulating film placed between layers at wire bonding, processes are complicated to require a planarizing process between metals, because traditionally the metal layer of the same potential as an emitter electrode is disposed below a base pad electrode in order to reduce a capacity C<SB>BC</SB>between the base and a collector which is one of factors to much contribute to improvement of high-frequency characteristics in a high-frequency semiconductor device, and because there exits two layers of a first layer's metal multilayer (to be one layer collectively) and a second layer's metal multilayer (to be one layer collectively). SOLUTION: A semiconductor layer with an emitter diffusion source extended is provided below the base pad electrode, and the same potential as the emitter electrode is set, by which reduction of the capacity at a base pad is attained by one metal multilayer. The high-frequency characteristics such as a gain-bandwidth product and a forward direction transfer gain are improved without the complicated manufacturing processes. COPYRIGHT: (C)2005,JPO&NCIPI
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