发明名称 FORMING METHOD OF POLYSILICON FILM AND THIN FILM TRANSISTOR CONSISTING OF POLYSILICON FILM FORMED BY THIS METHOD
摘要 PROBLEM TO BE SOLVED: To make a required space small and permit the reduction of a cost. SOLUTION: At first, a part except a pattern forming region is made repellent to liquid through the liquid repellent treatment 10 of a glass substrate. The liquid repellent treatment 10 consists of a liquid repellent film forming process 10a for forming a liquid repellent film on the glass substrate, and a patterning process 10b for patterning the liquid repellent film. Next, a solution applying process 12 is effected in non-oxidizing atmosphere to apply a solution obtained by dispersing the powder of amorphous silicon into a solvent on the pattern forming region of the glass substrate. Thereafter, a drying process 14 is effected in the non-oxidizing atmosphere and the solution is dried to form an amorphous silicon film. Subsequently, an annealing process 16 is effected in the non-oxidizing atmosphere to irradiate laser against the amorphous silicon film and obtain a polysilicon film by heating the amorphous silicon film. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005123355(A) 申请公布日期 2005.05.12
申请号 JP20030355821 申请日期 2003.10.16
申请人 SEIKO EPSON CORP 发明人 MORI YOSHIAKI
分类号 H01L21/20;H01L21/208;H01L21/336;H01L29/786;(IPC1-7):H01L21/20 主分类号 H01L21/20
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