发明名称 |
Ramp temperature techniques for improved mean wafer before clean |
摘要 |
A method of operating a substrate processing chamber comprising transferring a first substrate into the substrate processing chamber and heating the substrate to a first temperature of at least 510° C.; depositing an insulating layer over the first substrate while reducing the temperature of the substrate from the first temperature to a second temperature that is lower than the first temperature; transferring the first substrate out of the substrate processing chamber; removing unwanted deposition material formed on interior surfaces of the chamber during the depositing step by introducing reactive halogen species into the chamber while increasing the temperature of chamber; transferring a second substrate into the substrate processing chamber and heating the substrate to the first temperature; and depositing an insulating layer over the second substrate while reducing the temperature of the substrate from the first temperature to the second temperature.
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申请公布号 |
US2005101155(A1) |
申请公布日期 |
2005.05.12 |
申请号 |
US20030712464 |
申请日期 |
2003.11.12 |
申请人 |
APPLIED MATERIALS, INC., A DELAWARE CORPORATION |
发明人 |
BANG WON B.;WANG YEN-KUN;MUKAI KEVIN M.;LIU THERESA MARIE O. |
分类号 |
C23C16/44;C23C16/46;H01L21/316;H01L21/762;(IPC1-7):H01L21/76;H01L21/302;H01L21/461;H01L21/31;H01L21/469 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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