| 发明名称 |
Method of etching oxide with high selectivity |
| 摘要 |
A method of etching oxide in a high-density plasma using a fluorinated hydrocarbon gas and a fluorocarbon gas chemistry to provide a selectivity of oxide to photoresist in excess of 300:1.
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| 申请公布号 |
US2005098536(A1) |
申请公布日期 |
2005.05.12 |
| 申请号 |
US20030706904 |
申请日期 |
2003.11.12 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHOI JINHAN;LEE JAE G. |
| 分类号 |
H01L21/311;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68 |
主分类号 |
H01L21/311 |
| 代理机构 |
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