| 摘要 |
A semiconductor device and a method of producing the same is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of the substrate. A guide that functions as an etching stopper is formed in the semiconductor substrate. An opening having a width W 2 is formed in the guide. The opening faces an opening in a mask used in the formation of a through hole, and the width W 2 thereof is narrower than a width W 4 of the opening in the mask. The direction in which etching progresses is controlled by the opening formed in the guide as etching is conducted from a lower surface of the substrate to an upper surface of the substrate, and thus deviations in the width W 1 and position of an opening in the upper surface of the substrate can be controlled.
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